| Studiju veids |
maģistra profesionālās studijas |
| Studiju programmas nosaukums |
Medicīnas inženierija un fizika |
| Nosaukums |
Klevin potenciālu fotostimuletās metode pusvadītājiem. |
| Nosaukums angļu valodā |
Photo stimulated kelvin probe spectroscopy method for semiconductors. |
| Struktūrvienība |
31000 Būvniecības un mašīnzinību fakultāte |
| Darba vadītājs |
Jurijs Dehtjars |
| Recenzents |
Tom Yager |
| Anotācija |
The Purpose of this Master thesis is to discover a new approach that could study live topography and live electrical properties of the Semiconductor material to the Optical stimulation.
In this thesis, Kelvin probe Force Microscopy is used to resolve the surface potential generated upon Photo stimulation of various wavelength. However, KPFM technique is unsuitable for live electrical response measurements upon optical excitation called Photo Stimulated Kelvin Probe Spectroscopy. Introducing a new approach for simultaneous study of topography and live electrical properties of the materials to the optical excitation. The new technique named Kelvin probe spectroscopy, allows simultaneous non destructive investigation on live surface morphology, mapping of live electrical Properties on photo stimulation under variable wavelength. For the first time this technique allowed non destructive surface electrical studies of silicon. As a proof for the novel measurement method energy gap of silicon is identified and live electrical properties are measured under various wavelength.
Master’s thesis consists of 56 pages, 4 tables, 61 images and 16 source of information. |
| Atslēgas vārdi |
Kelvin Probe, surface potential, Photo stimulation, semiconductors, spectroscopy |
| Atslēgas vārdi angļu valodā |
Kelvin Probe, surface potential, Photo stimulation, semiconductors, spectroscopy |
| Valoda |
eng |
| Gads |
2019 |
| Darba augšupielādes datums un laiks |
03.06.2019 10:48:05 |
