| Form of studies |
Professional Master |
| Title of the study programm |
Medical Engineering and Physics |
| Title in original language |
Klevin potenciālu fotostimuletās metode pusvadītājiem. |
| Title in English |
Photo stimulated kelvin probe spectroscopy method for semiconductors. |
| Department |
Faculty Of Civil And Mehanical Engineering |
| Scientific advisor |
Jurijs Dehtjars |
| Reviewer |
Tom Yager |
| Abstract |
The Purpose of this Master thesis is to discover a new approach that could study live topography and live electrical properties of the Semiconductor material to the Optical stimulation.
In this thesis, Kelvin probe Force Microscopy is used to resolve the surface potential generated upon Photo stimulation of various wavelength. However, KPFM technique is unsuitable for live electrical response measurements upon optical excitation called Photo Stimulated Kelvin Probe Spectroscopy. Introducing a new approach for simultaneous study of topography and live electrical properties of the materials to the optical excitation. The new technique named Kelvin probe spectroscopy, allows simultaneous non destructive investigation on live surface morphology, mapping of live electrical Properties on photo stimulation under variable wavelength. For the first time this technique allowed non destructive surface electrical studies of silicon. As a proof for the novel measurement method energy gap of silicon is identified and live electrical properties are measured under various wavelength.
Master’s thesis consists of 56 pages, 4 tables, 61 images and 16 source of information. |
| Keywords |
Kelvin Probe, surface potential, Photo stimulation, semiconductors, spectroscopy |
| Keywords in English |
Kelvin Probe, surface potential, Photo stimulation, semiconductors, spectroscopy |
| Language |
eng |
| Year |
2019 |
| Date and time of uploading |
03.06.2019 10:48:05 |
